| Advanced Lithography Machines (EUV / ArF Immersion) | Integrated Water-Cooled SiC Machine Base / Reticle Stage Base | Flatness ≤0.05μm/mStraightness ≤0.03μm/mPerpendicularity ≤0.05μm/mSurface Roughness Ra ≤0.01μm | Thermal Conductivity ≥180W/(m·K)Coefficient of Linear Thermal Expansion ≈3.8×10⁻⁶/℃Temperature Difference Across Entire Area under Water Cooling ＜0.05℃ | Elastic Modulus ≥420GPaSpecific Stiffness Much Higher Than GraniteDeformation ＜1nm During High-Speed ScanningHigh Damping to Suppress Nanometer-Level Micro-Vibration | No Elastic Deformation During High-Speed Scanning; Uniform Temperature Control Eliminates Thermal Drift; Lightweight Design Reduces Driving Load, Ensuring Overlay Accuracy of 2–7nm |
| Wafer Metrology Equipment (CD-SEM / White Light Interferometer / Defect Inspection) | Medium & Small-Sized Water-Cooled SiC Substrate | Flatness: 0.05~0.1μm/mHeight Difference ≤0.1μm Per Whole PlateRa ≤0.02μm | Thermal Conductivity ≥150W/(m·K)Temperature Difference Under Water Cooling ＜0.1℃ | High Rigidity to Restrain Imaging Shake; Low Dust Generation & Wear Resistance | Avoid Warpage Caused by Local Heating to Prevent Optical Imaging Distortion; Repeat Measurement Error ＜2nm |
| 12-inch Semiconductor Prober | Solid Precision SiC Substrate | Flatness ≤0.1μm/mParallelism ≤0.1μm/m | Thermal Conductivity: 120~160W/(m·K); No Built-In Water Cooling, Relies on Ambient Constant Temperature ±0.1℃ | High Density & High Damping to Isolate Ground Vibration; Long-Term Wear Resistance Without Dust Generation | Ensure Repeated Positioning Accuracy of Probe Needles and Prevent Scrap Caused by Pad Offset |
| Wafer Polishing / Thinning / Laser Cutting Equipment | Solid SiC Machine Tool Base | Flatness: 0.1~0.2μm/mThickness Uniformity ≤0.2μm | Thermal Conductivity ≥130W/(m·K) | Ultra-High Hardness, No Wear Under Reciprocating Machining; High Rigidity to Suppress Cutting Vibration | Guarantee Uniform Wafer TTV Thickness and Avoid Hard Particle Contamination on Wafer Surface |
| Ultra-Precision Diamond Turning Lathe / Nano Grinding Machine | Integrated Water-Cooled SiC Gantry Base | Flatness ≤0.08μm/mStraightness of Guide Rail Mounting Reference ≤0.04μm/m | Uniform Heat Exchange in Water Flow Channels; Overall Machine Temperature Difference ＜0.08℃ | Lightweight & High Rigidity with Minimal Deformation During High-Speed Cutting | Machining of Optical Lenses & Molds with Surface Shape Accuracy Within λ/50 |
| High-Precision Coordinate Measuring Machine (CMM) | Solid SiC Sliding Base | Flatness: 0.1~0.15μm/mPerpendicularity ≤0.1μm/m | Low Thermal Expansion; Dimensional Drift Negligible Under Slight Ambient Temperature Fluctuations | Lighter Self-Weight with Faster Motion Response Than Granite | Realize Sub-Micron 3D Dimensional Inspection and Reduce Workload of Temperature Compensation |
| Space Optics / Space Telescope Payloads | Lightweight Hollow Water-Cooled SiC Base | Mirror Reference Surface Figure Accuracy λ/100 RMSOverall Flatness ≤0.05μm/m | Stable Under Wide Temperature Range (-180℃~120℃) Without Obvious Deformation; High Thermal Conductivity for Rapid Temperature Equalization | 30%~60% Weight Reduction; Radiation Resistance & Micro-Vibration Resistance | Adapt to Extreme Space Temperature Differences, Lower Launch Load, and Maintain Long-Term Stable Surface Shape |
| MOCVD / Crystal Growth Equipment Carrier Substrate | Solid Constant-Temperature SiC Base | Flatness: 0.2~0.3μm/m | High Temperature Resistance Above 1400℃, Excellent Thermal Shock Stability & Uniform Heat Conduction | Low Outgassing & Plasma Corrosion Resistance | Ensure Uniform Temperature Field on Wafer Epitaxial Layer and Reduce Crystal Defects |
| High-Computing AI Liquid Cooling Module Base | Integrated Microchannel Water-Cooled SiC Substrate | Assembly Reference Flatness ≤0.2μm/m | Thermal Conductivity ≥200W/(m·K), Heat Dissipation for High Heat Flux Density | Insulating Property & High Rigidity Without Leakage Risk | Rapidly Dissipate High Heat from GPUs and Stabilize Module Positioning Accuracy |
| Traditional Granite Base (Benchmark Reference) | Solid Stone Base | Flatness: 0.2~0.5μm/m; Poor Thermal Conductivity, Unable to Embed Integrated Water Cooling | Thermal Conductivity: 3~5W/(m·K); Prone to Warpage Under Local HeatingCoefficient of Linear Thermal Expansion: 4.5~6×10⁻⁶/℃ | Heavy Weight; Surface Precision Degrades After Long-Term Wear | Only Applicable to Ordinary Micron-Level Equipment, Unable to Meet Nanoscale Thermal Control Requirements of Advanced Semiconductors |
